Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-06-19
2007-06-19
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S431000, C257S293000, C257S290000
Reexamination Certificate
active
11419866
ABSTRACT:
A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.
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Hung Chia-Chun
Lin Chian-Liang
Liu Shih-Min
Yang Jung-Chen
Zhang Wei
Duane Morris LLP
Menz Douglas M.
Taiwan Semiconductor Manufacturing Company
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