System and method of reducing particle contamination of...

Details System and method of reducing particle contamination of... System and method of reducing particle contamination of...

2005-12-16

2009-06-30

Culbert, Roberts P (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

C118S715000, C118S728000

Reexamination Certificate

active

07553516

ABSTRACT:
Particle contamination of semiconductor substrates due to particles coming off of wafer boat rods is reduced. A gas flow is established with the boat rods downstream of the substrates, to blow particles from the boat rods away from the substrates. The boat rods can also be placed upstream of the substrates in the gas flow, and a flow deflector is used to minimize the flow of gas contacting the boat rods, to reduce the amount of particles being blown off the rods. In addition, the gas flow can be below a rate at which particle generation is likely or can be at a sufficiently high rate to minimize the possibility of particles settling on the substrates.

REFERENCES:
patent: 4262631 (1981-04-01), Kubacki
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4298629 (1981-11-01), Nozaki et al.
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4570328 (1986-02-01), Price et al.
patent: 4585671 (1986-04-01), Kitagawa et al.
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4699805 (1987-10-01), Seelbach et al.
patent: 4715937 (1987-12-01), Moslehi et al.
patent: 4834020 (1989-05-01), Bartholomew
patent: 4851095 (1989-07-01), Scobey et al.
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 4986715 (1991-01-01), Asakawa
patent: 5178639 (1993-01-01), Nishi
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5254170 (1993-10-01), Devilbiss et al.
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5387265 (1995-02-01), Kakizaki et al.
patent: 5389398 (1995-02-01), Suzuki et al.
patent: 5389570 (1995-02-01), Shiozawa
patent: 5407449 (1995-04-01), Zinger
patent: 5453858 (1995-09-01), Yamazaki
patent: 5464313 (1995-11-01), Ohsawa
patent: 5549473 (1996-08-01), Valentian
patent: 5562383 (1996-10-01), Iwai et al.
patent: 5607724 (1997-03-01), Beinglass et al.
patent: 5614257 (1997-03-01), Beinglass et al.
patent: 5648293 (1997-07-01), Hayama et al.
patent: 5656531 (1997-08-01), Thakur et al.
patent: 5695819 (1997-12-01), Beinglass et al.
patent: 5698771 (1997-12-01), Shields et al.
patent: 5700520 (1997-12-01), Beinglass et al.
patent: 5769950 (1998-06-01), Takasu et al.
patent: 5786027 (1998-07-01), Rolfson
patent: 5788448 (1998-08-01), Wakamori et al.
patent: 5789030 (1998-08-01), Rolfson
patent: 5837580 (1998-11-01), Thakur et al.
patent: 5874129 (1999-02-01), Beinglass et al.
patent: 5876797 (1999-03-01), Beinglass et al.
patent: 5885869 (1999-03-01), Turner et al.
patent: 5907792 (1999-05-01), Droopad et al.
patent: 5916365 (1999-06-01), Sherman
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6027705 (2000-02-01), Kitsuno et al.
patent: 6083810 (2000-07-01), Obeng et al.
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6143083 (2000-11-01), Yonemitsu et al.
patent: 6159828 (2000-12-01), Ping et al.
patent: 6171662 (2001-01-01), Nakao
patent: 6197669 (2001-03-01), Twu et al.
patent: 6197694 (2001-03-01), Beinglass
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6228181 (2001-05-01), Yamamoto et al.
patent: 6318944 (2001-11-01), Shimeno et al.
patent: 6326311 (2001-12-01), Ueda et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6455892 (2002-09-01), Okuno et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6481945 (2002-11-01), Hasper et al.
patent: 6528530 (2003-03-01), Zeitlin et al.
patent: 6537910 (2003-03-01), Burke et al.
patent: 6540465 (2003-04-01), Tometsuka
patent: 6613695 (2003-09-01), Pomarede et al.
patent: 6638879 (2003-10-01), Hsich et al.
patent: 6663332 (2003-12-01), Sluijk et al.
patent: 2002/0037210 (2002-03-01), Matsunaga et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0168868 (2002-11-01), Todd
patent: 2002/0197831 (2002-12-01), Todd et al.
patent: 2003/0022528 (2003-01-01), Todd
patent: 2003/0082300 (2003-05-01), Todd et al.
patent: 2003/0111013 (2003-06-01), Oosterlaken et al.
patent: 2003/0148605 (2003-08-01), Shimogaki et al.
patent: 0442490 (1991-08-01), None
patent: 0526779 (1993-02-01), None
patent: 59078919 (1982-01-01), None
patent: 57209810 (1982-12-01), None
patent: 59078918 (1984-05-01), None
patent: 60043485 (1985-03-01), None
patent: S60-43485 (1985-03-01), None
patent: 61153277 (1986-07-01), None
patent: 62076612 (1987-04-01), None
patent: 63003414 (1988-01-01), None
patent: 63003463 (1988-01-01), None
patent: 01217956 (1989-08-01), None
patent: 01268064 (1989-10-01), None
patent: 02155225 (1990-06-01), None
patent: H 02-155225 (1990-06-01), None
patent: 03091239 (1991-04-01), None
patent: H3-91239 (1991-04-01), None
patent: 03185817 (1991-08-01), None
patent: 03187215 (1991-08-01), None
patent: H3-185817 (1991-08-01), None
patent: H3-187215 (1991-08-01), None
patent: 03292741 (1991-12-01), None
patent: 04323834 (1992-11-01), None
patent: 05021378 (1993-01-01), None
patent: 05062911 (1993-03-01), None
patent: H5-62911 (1993-03-01), None
patent: 07249618 (1995-09-01), None
patent: 08242006 (1996-09-01), None
patent: 2001244322 (2001-09-01), None
patent: 1005410 (1997-02-01), None
patent: WO 98/36444 (1998-08-01), None
Hiltunen et al., “Nitrides of Titanium, Niobium, Tantalum and Molybdenum Grown as Thin Films by the Atomic Layer Epitaxy Method,” Thin Solid Films, 166 (1988) 149-154.
Hillman et al., “Properties of LPCVD TiN Barrier Layers,” Microelectronic Engineering 19 (1992) 375-378.
Hiramatsu et al., Formation of TiN Films with Low CI Concentration by Pulsed Plasma Chemical Vapor Deposition, J. Vac. Sci. Technol. A, 14(3) May/Jun. 1996.
Ikoma et al., Growth of Si/3C-SiC/Si(100) hetrostructures by pulsed supersonic free jets, Applied Physics Letters, vol. 75, No. 25, pp. 3977-3979, Dec. 1999.
Iyer, R. Suryanarayanan et al., “A Process Method of Silicon Nitride Atomic Layer Cyclic Deposition,” Semicon Taiwan 2001, pp. 17-25.
Nakano et al., “Digital Chemical Vapor Deposition of SiO2,” Appl Phys. Lett. 57 (11) Sep. 1990, pp. 1096-1098.
Ramanuja, et al., “Synthesis and characterization of low pressure chemically vapor deposited titanium nitride films using TiCl4and NH3, ” Materials Letters 57 (2002) 261-269.
Sakaue et al., Digital Chemical Vapor Deposition of SiO2Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation, Japanese Journal of Applied Materials, vol. 30, No. 1B, Jan. 1990, pp. L 124-L 127.

Affiliated with

Also associated with

Rating

System and method of reducing particle contamination of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method of reducing particle contamination of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method of reducing particle contamination of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4093789