Image analysis – Applications – Manufacturing or product inspection
Reexamination Certificate
2005-03-29
2005-03-29
Mehta, Bhavesh M. (Department: 2625)
Image analysis
Applications
Manufacturing or product inspection
C382S213000, C382S144000, C700S110000, C716S030000
Reexamination Certificate
active
06873720
ABSTRACT:
A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
REFERENCES:
patent: 4809341 (1989-02-01), Matsui et al.
patent: 5326659 (1994-07-01), Liu et al.
patent: 5340700 (1994-08-01), Chen et al.
patent: 5432714 (1995-07-01), Chung et al.
patent: 5572598 (1996-11-01), Wihl et al.
patent: 5795688 (1998-08-01), Burdorf et al.
patent: 5801954 (1998-09-01), Le et al.
patent: 5804340 (1998-09-01), Garza et al.
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka
patent: 5849440 (1998-12-01), Lucas et al.
patent: 5862058 (1999-01-01), Samuels et al.
patent: 5900338 (1999-05-01), Garza et al.
patent: 5965306 (1999-10-01), Mansfield et al.
patent: 6009250 (1999-12-01), Ho et al.
patent: 6009251 (1999-12-01), Ho et al.
patent: 6011911 (2000-01-01), Ho et al.
patent: 6016357 (2000-01-01), Neary et al.
patent: 6023328 (2000-02-01), Pierrat
patent: 6076465 (2000-06-01), Vacca et al.
patent: 6078738 (2000-06-01), Garza et al.
patent: 6081659 (2000-06-01), Garza et al.
patent: 6091845 (2000-07-01), Pierrat et al.
patent: 6130750 (2000-10-01), Ausschnitt et al.
patent: 6171731 (2001-01-01), Medvedeva et al.
patent: 6272236 (2001-08-01), Pierrat et al.
patent: 6272392 (2001-08-01), Capodieci
patent: 6334209 (2001-12-01), Hashimoto et al.
patent: 6346426 (2002-02-01), Toprac et al.
patent: 6578188 (2003-06-01), Pang et al.
patent: 20020019729 (2002-02-01), Chang et al.
patent: 20020164064 (2002-11-01), Karklin et al.
patent: 20020164065 (2002-11-01), Cai et al.
patent: 100 37 697 (2001-03-01), None
patent: 0 306 275 (1989-03-01), None
patent: 2001056306 (2001-02-01), None
patent: WO 9713370 (1997-04-01), None
patent: WO 9820327 (1998-05-01), None
patent: WO 9845685 (1998-10-01), None
patent: WO 9914706 (1999-03-01), None
patent: WO 9914706 (1999-03-01), None
patent: WO 9914706 (1999-03-01), None
patent: WO 9938002 (1999-07-01), None
patent: WO 9956113 (1999-11-01), None
patent: WO 9959200 (1999-11-01), None
patent: WO 9967626 (1999-12-01), None
patent: WO 0036525 (2000-06-01), None
patent: WO 0067074 (2000-11-01), None
patent: WO 0067075 (2000-11-01), None
Lin, B.J., et al., “Single-Level Electric Testsites for Phase-Shifting Masks”, SPIE, vol. 1673, pp. 221-228, Mar. 9-11, 1992.
Spence, C., et al., “Detection of 60(degree) Phase Defects on Alternating PSMs”, Advanced Micro Devices, KLA-Tencor, DuPont RTC (2 pages).
Ogawa, K., et al., “Phase Defect Inspection by Differential Interference”, Lasertec Corporation (12 pages).
Socha, R., et al., “Printability of Phase-Shift Defects Using a Perturbational Model”, Univ. of California Berkeley, Sematech (11 pages).
Fiekowsky, P., “The End of Thresholds: Subwavelength Optical Linewidth Measurement Using the Flux-Area Technique”, Automated Visual Inspection (6 pages).
Watanabe, H., et al., “Detection and Printability of Shifter Defects in Phase-Shifting Masks”, Japanese Journal of Applied Physics, vol. 30, No. 11B, pp. 3016-3020, Nov. 1991.
Hosono, K., et al., “A Novel Architecture for High Speed Dual Image Generation of Pattern Data for Phase Shifting Reticle Inspection”, SPIE—Integrated Circuit Metrology, Inspection, and Process Control VI, vol. 1673, pp. 229-235 (1992).
Ohtsuka, H., et al., “Evaluation of Repair Phase and Size Tolerance for a Phase-Shift Mask”, J. Vac. Sci. Technol. B, vol. 11, No. 6, pp. 2665-2668, Nov./Dec. 1993.
Reynolds, J., “Elusive Mask Defects: Reflectivity Variations”, Solid State Technology, pp. 75-76, Mar. 1995.
Kusunose, H., et al., “Direct Phase-Shift Measurement with Transmitted Deep-UV Illumination”, SPIE, vol. 2793, pp. 251-260 (1996).
Fiekowsky, P., et al., “Defect Printability Measurement on the KLA-351: Correlation to Defect Sizing Using the AVI Metrology System”, SPIE 19th Annual BACUS Symposium on Photomask Technology and Management Conference, pp. 1-6, Sep. 1999.
Tejnil, E., et al., “Option for At-Wavelength Inspection of Patterned Extreme Ultraviolet Lithography Masks”, SPIE Bacus '99, pp. 1-12 (1999).
Hemar, S., et al., “Finding Killer CD Variations by Full-Reticle CD Mapping”, Microlithography World, pp. 4, 6, 8 & 10 (Summer 2000).
Adam, K., et al., “Simplified Models for Edge Transitions in Rigorous Mask Modeling”, University of California Berkeley (40 pages).
Gordon, R., et al., “Mask Topography Simulation for EUV Lithography”, FINLE Technologies Inc. (15 pages).
Pistor, T., “Rigorous 3D Simulation of Phase Defects in Alternating Phase-Shifting Masks”, Panoramic Technology Inc. (13 pages).
Semmier, A., et al., “Application of 3D EMF Simulation for Development and Optimization of Alternating Phase Shifting Masks”, Infineon Technologies AG (12 pages).
Wong, A., et al., “Polarization Effects in Mask Transmission”, University of California Berkeley (8 pages).
Neureuther, A., et al., “Modeling Defect-Feature Interactions in the Presence of Aberrations”, University of California Berkeley (10 pages).
Mathur, B.P., et al., “Quantitative Evaluation of Shape of Image on Photoresist of Square Apertures”, IEEE, Transactions On Electron Devices, vol. 35, No. 3, pp. 294-297, Mar. 1988.
Crisalle, O., et al., “A Comparison of the Optical Projection Lithography Simulators in SAMPLE and PROLITH”, IEEE, Transactions On Semiconductor Manufacturing, vol. 5, No. 1, pp. 14-26, Feb. 1992.
Qian, Q.D., et al., “A New Scalar Planewave Model for High NA Lithography Simulations”, IEEE, pp. 45-48 (1994).
Balasinski, A., et al., “A Novel Approach to Simulate the Effect of Optical Proximity on MOSFET Parametric Yield”, IEEE, pp. 37.6.1-37.6.4 (1999).
Balasinski, A., et al., “Comparison of Mask Writing Tools and Mask Simulations for 0.16um Devices”, IEEE, SEMI Advanced Semiconductor Manufacturing Conference, pp. 372-377 (1999).
Brunner, T. et al., “Approximate Models For Resist Processing Effects”,SPIE, vol. 2726, pp. 198-207, Mar. 1996.
Casey, Jr., J.D. et al., “Chemically Enhanced FIB Repair Of Opaque Defects On Molybdenum Silicide Photomasks”,SPIE, vol. 3236, pp. 487-497 (1997).
Chang, K. et al., “Accurate Modeling of Deep Submicron Interconnect Technology”,TMA Times, vol. IX, No. 3 (1997).
Cobb, et al., “Fast Sparse Aerial Image Calculation For OPC”,SPIE, vol. 2621, pp. 534-544.
Fukuda, H. et al., “Determination Of High-Order Lens Aberration Using Phase/Amplitude Linear Algebra”,J. Vac. Sci. Technol. B, vol. 17, No. 6, pp. 3318-3321, Nov./Dec. 1999.
Fukuda, H., “Node-Connection/Quantum Phase-Shifting Mask: Path To Below 0.3μm Pitch, Proximity Effect Free Random Interconnects And Memory Patterning”,J. Vac. Sci. Technol. B, vol. 17, No. 6, pp. 3291-3295, Nov./Dec. 1999.
Gans, F. et al., “Printability and Repair Techniques For DUV Photomasks”,SPIE, Proceedings of the 17thAnnual Symposium on Photomask Technology and Management, vol. 3236, pp. 136-141 (1997).
Ham, Y.M. et al., “Dependence Of Defects In Optical Lithography”,Jpn. J. Appl. Phys., vol. 31, pp. 4137-4142 (1992).
Henke, W. et al., “A Study Of Reticle Defects Imaged Into Three-Dimensional Developed Profiles Of Positive Photoresist Using The Solid Li
Cai Lynn
Karklin Linard
Pang Linyong
Azarian Seyed
Bever Hoffman & Harms LLP
Harms Jeanette S.
Synopsys Inc.
LandOfFree
System and method of providing mask defect printability... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method of providing mask defect printability..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method of providing mask defect printability... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3444403