System and method of performing uniform dose implantation...

Details System and method of performing uniform dose implantation... System and method of performing uniform dose implantation...

2009-04-28

2011-12-06

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S281000, C250S282000, C250S3960ML, C250S397000, C427S523000

Reexamination Certificate

active

08071964

ABSTRACT:
An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

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U.S. Appl. No. 12/717,536, filed Mar. 4, 2010.
Notice of Allowance Dated Sep. 20, 2011 for U.S. Appl. No. 12/717,536. 22 Pages.

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