System and method of controlling broad beam uniformity

Details System and method of controlling broad beam uniformity System and method of controlling broad beam uniformity

2008-06-25

2010-12-28

Souw, Bernard E (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S285000, C250S288000, C250S3960ML, C250S3960ML, C250S42300F, C250S424000

Reexamination Certificate

active

07858955

ABSTRACT:
An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

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