Electrical resistors – Resistance value responsive to a condition – Ambient temperature
Reexamination Certificate
2007-06-12
2007-06-12
Hoang, Tu (Department: 2832)
Electrical resistors
Resistance value responsive to a condition
Ambient temperature
C338S029000, C338S333000
Reexamination Certificate
active
10927357
ABSTRACT:
A system and method is disclosed for using plasma to adjust the resistance of a thin film resistor. In one advantageous embodiment of the invention, the resistance of a thin film resistor is increased to cause the thin film resistor to have a desired higher value of resistance. The thin film resistor is formed having an initial value of resistance that is less than the desired value of resistance. Then the thin film resistor is placed in an oxidizing atmosphere. A surface of the thin film resistor is then oxidized to increase the initial value of resistance to the desired value of resistance. The amount of the increase in resistance may be selected by selecting the temperature of the oxidizing atmosphere.
REFERENCES:
patent: 6809034 (2004-10-01), Ito et al.
patent: 2004/0075527 (2004-04-01), Zitzmann et al.
patent: 2004/0129673 (2004-07-01), Belyansky et al.
patent: 2004/0203241 (2004-10-01), Hampden-Smith et al.
patent: 2005/0003673 (2005-01-01), Mahdavi
Bold Tom
Deshmukh Abhay Ramrao
Foote, Jr. Richard Wendell
Hill Rodney
Hoang Tu
National Semiconductor Corporation
LandOfFree
System and method for using plasma to adjust the resistance... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for using plasma to adjust the resistance..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for using plasma to adjust the resistance... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3881209