Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-05-02
2006-05-02
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492300, C250S306000, C250S307000, C250S309000, C250S310000, C700S121000, C257SE21001
Reexamination Certificate
active
07038222
ABSTRACT:
A system and method is described for using areas in or near photo global alignment marks or in or near unpatterned areas of a semiconductor wafer to create structures for secondary ion mass spectroscopy (SIMS) testing or electron beam (E-Beam) testing or X-ray diffraction (XRD) testing of the semiconductor wafer. The present invention makes it possible to obtain wafer level information about the front-end processing of the semiconductor wafers. The SIMS/E-Beam/XRD testing measures characteristics such as the dopant content, thickness variations, and defect density of the wafers. The present invention eliminates the need to build individual test structures within product dies and eliminates the need to build scribe line structures near the product dies.
REFERENCES:
patent: 5625288 (1997-04-01), Snyder et al.
Budri Thanas
Krott Loren Charles
Patel Neil Suresh
Smith Aaron Michael
National Semiconductor Corporation
Wells Nikita
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