System and method for using an oxidation process to create a...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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C257SE23179

Reexamination Certificate

active

07390722

ABSTRACT:
An oxidation process is used to produce a positional reference structure on a semiconductor wafer. A photolithographic mask layer used to define the positional reference structure can be combined with a photolithographic mask layer used to define an active device layer on the wafer, whereby both patterns can be printed in a single photolithographic operation. The same oxidation process used to produce an isolating oxide between active device regions of the active device layer can also be used to produce the positional reference structure.

REFERENCES:
patent: 5786260 (1998-07-01), Jang et al.
patent: 5963816 (1999-10-01), Wang et al.
patent: 6534378 (2003-03-01), Ramkumar et al.
patent: 6579738 (2003-06-01), Farrar et al.

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