Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2008-06-24
2008-06-24
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C257SE23179
Reexamination Certificate
active
07390722
ABSTRACT:
An oxidation process is used to produce a positional reference structure on a semiconductor wafer. A photolithographic mask layer used to define the positional reference structure can be combined with a photolithographic mask layer used to define an active device layer on the wafer, whereby both patterns can be printed in a single photolithographic operation. The same oxidation process used to produce an isolating oxide between active device regions of the active device layer can also be used to produce the positional reference structure.
REFERENCES:
patent: 5786260 (1998-07-01), Jang et al.
patent: 5963816 (1999-10-01), Wang et al.
patent: 6534378 (2003-03-01), Ramkumar et al.
patent: 6579738 (2003-06-01), Farrar et al.
Lebentritt Michael S.
National Semiconductor Corporation
Stevenson Andre′
LandOfFree
System and method for using an oxidation process to create a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for using an oxidation process to create a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for using an oxidation process to create a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2808896