System and method for testing gate oxide of an amplifier

Details System and method for testing gate oxide of an amplifier System and method for testing gate oxide of an amplifier

2007-03-20

2007-03-20

Pascal, Robert (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including field effect transistor

C324S762010

Reexamination Certificate

active

11123686

ABSTRACT:
An amplifier system and method is provided for performing gate oxide integrity (GOI) testing of a power output field effect transistor (FET) of the amplifier system. The amplifier system and method provide for integrated test circuitry that protect drive components during overvoltage stress of a gate of the power output FET, and disables and/or isolates drive devices associated with leakage paths from the gate during gate oxide leakage measurements.

REFERENCES:
patent: 5798649 (1998-08-01), Smayling et al.
patent: 6812050 (2004-11-01), Ramappa
patent: 2006/0076972 (2006-04-01), Walker et al.

Affiliated with

Also associated with

Rating

System and method for testing gate oxide of an amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method for testing gate oxide of an amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for testing gate oxide of an amplifier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3747907