Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-02-06
2007-02-06
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S745000
Reexamination Certificate
active
10979622
ABSTRACT:
A system and method is disclosed for selectively increasing a wet etch rate of a large raised area portion of a semiconductor wafer with respect to a wet etch rate of a small raised area portion of the semiconductor wafer. A resist mask on the semiconductor wafer is etched to create a large via over the large raised area portion and a small via over the small raised area portion. An ion implantation beam is applied with an impact direction that enables ions to pass through the large via but does not enable ions to pass through the small via. The ions that pass through the large via increase the wet etch rate of the underlying portion of the semiconductor wafer. In one embodiment the impact direction has a tilt angle of forty five degrees and a rotation angle of forty five degrees.
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Coppock William M.
Foote Richard W.
Lines Terry
Torres Victor M.
Chen Kin-Chan
National Semiconductor Corporation
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