Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2007-07-31
2007-07-31
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S033000, C438S068000, C438S113000, C438S118000, C438S460000, C438S464000, C438S508000, C257S620000, C257SE23179, C372S046012
Reexamination Certificate
active
10903367
ABSTRACT:
A system and method is described for providing automated sample preparation for plan view transmission electron microscopy. A sample wafer is microcleaved from a semiconductor wafer and mounted on a first support stub. Then the sample wafer is cut with an automated diamond sawing tool to expose a cross sectional view of the sample wafer. The sample wafer is removed from the first support stub and rotated to orient the sample wafer for plan view imaging. The rotated sample wafer is then remounted on a second support stub and cut with the automated diamond sawing tool to expose a plan view surface of the rotated sample wafer. The remounted sample wafer is subsequently prepared for focused ion beam (FIB) milling and plan view transmission electron microscopy imaging.
REFERENCES:
Wayne D. Kaplan et al., “Automatic TEM Sample Preparation”, Proceedings from the 25th International Symposium for Testing and Failure Analysis, Nov. 14-18, 1999, Santa Clara, California, pp. 103-107.
Ron Anderson et al., “Combined Tripod Polishing and FIB Method for Preparing Semiconductor Plan View Specimens”, Material Research Society Symposium Proceedings vol. 480, 1997, pp. 187-192.
Johnson Mark Alan
Mayes Larry W.
Fourson George R.
National Semiconductor Corporation
Pham Thanh V.
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