Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-07-03
2007-07-03
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S751000, C438S756000
Reexamination Certificate
active
10781166
ABSTRACT:
A system and method is disclosed for using a differential wet etch stop technique to provide a uniform oxide layer over a metal layer in a laser trimmed fuse. A layer of boron doped oxide with a slow etch rate is placed over the metal layer. A layer of phosphorus doped oxide with a fast etch rate is placed over the boron doped oxide. The time period required for a wet etch process to etch through the phosphorus doped oxide is calculated. The wet etch process is then applied to the phosphorus doped oxide for the calculated time period. The wet etch process slows significantly when it reaches the boron doped oxide. This method forms a uniform layer of boron doped oxide over the metal layer.
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National Semiconductor Corporation
Nguyen Tuan H.
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