System and method for providing a self aligned bipolar...

Details System and method for providing a self aligned bipolar... System and method for providing a self aligned bipolar...

2011-03-22

2011-03-22

Such, Matthew W (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C257SE21372

Reexamination Certificate

active

07910447

ABSTRACT:
A system and method are disclosed for providing a self aligned bipolar transistor using a simplified sacrificial nitride emitter. An active region of a transistor is formed and a silicon nitride sacrificial emitter is formed above the active region of the transistor. Then a physical vapor deposition oxide layer is deposited over the silicon nitride sacrificial emitter using a physical vapor deposition process. The physical vapor deposition oxide layer is then etched away from the side walls of the sacrificial emitter. The sacrificial emitter is then etched away to form an emitter window. Then a polysilicon emitter structure is formed in the emitter window. The self aligned bipolar transistor architecture of the invention is compatible with BiCMOS technology.

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