System and method for providing a dual via architecture for...

Details System and method for providing a dual via architecture for... System and method for providing a dual via architecture for...

2005-08-03

2008-08-12

Graybill, David E (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Resistor

Reexamination Certificate

active

07410879

ABSTRACT:
A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the thin film resistor. First and second portions of a first dielectric material are formed over the resistor protect layer over the first and second ends of the thin film resistor. The resistor protect layer is then wet etched using the first and second portions of the first dielectric material as a hard mask. Then a second dielectric layer is deposited. A first via mask and etch process is used to etch vias down to the underlying portions of the resistor protect layer over the ends of the thin film resistor. A second via mask and etch process is used to etch substrate vias to an underlying conductor layer.

REFERENCES:
patent: 6097095 (2000-08-01), Chung
patent: 6117789 (2000-09-01), Lee
patent: 6326256 (2001-12-01), Bailey et al.
patent: 6645821 (2003-11-01), Bailey et al.

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