System and method for programming nonvolatile memory

Details System and method for programming nonvolatile memory System and method for programming nonvolatile memory

1998-12-29

2000-08-01

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 36518522, 36518524, G11C 1604

Patent

active

06097639&

ABSTRACT:
A system for programming a nonvolatile memory includes a plurality of memory cells each having a field effect transistor with a control gate, a drain, a source, and a charge storage region, voltage sources for applying preset voltages pertinent to a threshold level to the source, the drain, and the control gate in each of the memory cells, a monitor for monitoring a current flowing through a channel in each of the memory cells, and a controller for stopping at least one of the voltages applied to the source, the drain, and the control gate in each of the memory cells when the monitor senses that the current flowing through the channel in the memory cell reaches a reference current.

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