Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2005-08-02
2009-12-08
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240
Reexamination Certificate
active
07630237
ABSTRACT:
A system and method for quickly and efficiently programming hard-to-program storage elements in non-volatile integrated memory devices is presented. A number of storage elements are simultaneously subjected to a programming process with the current flowing through the storage elements limited to a first level. As a portion of these storage elements reach a prescribed state, they are removed from the set of cells being programmed and the current limit on the elements that continue to be programmed is raised. The current level in these hard-to-program cells can be raised to a second, higher limit or unregulated. According to another aspect, during a program operation the current limit allowed for a cell depends upon the target state to which it is to be programmed.
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Guterman Daniel C.
Mokhlesi Nima
Davis , Wright, Tremaine, LLP
SanDisk Corporation
Tran Michael T
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