System and method for programming cells in non-volatile...

Details System and method for programming cells in non-volatile... System and method for programming cells in non-volatile...

2005-02-15

2005-02-15

Tran, M. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190

Reexamination Certificate

active

06856551

ABSTRACT:
A system and method for quickly and efficiently programming hard-to-program storage elements in non-volatile integrated memory devices is presented. A number of storage elements are simultaneously subjected to a programming process with the current flowing through the storage elements limited to a first level. As a portion of these storage elements reach a prescribed state, they are removed from the set of cells being programmed and the current limit on the elements that continue to be programmed is raised. The current level in these hard-to-program cells can be raised to a second, higher limit or unregulated.

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