System and method for producing electro-optic components integra

Coating processes – Electrical product produced – Metallic compound coating

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156610, 20419211, 250216, 427162, B05D 512

Patent

active

052427072

ABSTRACT:
A system and method are disclosed for producing electro-optic components with transparent, ferroelectric PLZT (perovskite) film characteristics, without lead diffusion. In particular, the fabrication of PLZT-on-sapphire electro-optic components for devices such as spatial light modulators, integrated infrared detectors, and optoelectronic integrated circuits is disclosed, permitting integration of such devices with semiconductor devices having the same substrate, such as silicon-on-sapphire circuits. The system comprises a PLZT film deposition apparatus, a silicon dioxide deposition apparatus, an annealing apparatus, and an optional plasma etching apparatus. During film deposition, material from a PLZT target (source) of suitable (9/65/35) composition is deposited on the substrate and is epitaxially grown on the R-plane (1102) of the substrate, forming a non-ferroelectric, pyrochloric film. The substrate and film are then placed in a silicon dioxide (SiO.sub.2) deposition chamber where SiO.sub.2 is deposited as an insulating layer covering (capping) the film. The substrate, with film and SiO.sub.2 layer, is then placed in an annealing apparatus, at a selected temperature above 550.degree. C. for a selected period of time, to transform the non-ferroelectric, pyrochloric film into a ferroelectric, perovskite film of (9/65/35) composition. The SiO.sub.2 layer may then be removed by conventional etching.

REFERENCES:
patent: 4266265 (1981-05-01), Maher
patent: 4701592 (1987-10-01), Cheung
patent: 5043049 (1991-08-01), Takenaka

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