Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-01-30
2007-01-30
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S048000, C438S253000
Reexamination Certificate
active
10937660
ABSTRACT:
Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the vicinity of the tunnel junction layer which serves to electrically isolate the upper magnetic layer from the lower magnetic layer. The gas employed during plasma overetching excludes halogen containing species which results in highly selective etching of the magnetic layer vis-à-vis the alumina tunnel barrier layer. The introduction of oxygen in the gas may enhance the reproducibility of the overetch process. Finally, plasma treatment with He and H2followed by rinsing and baking subsequent to removal of the photoresist mask during the fabrication process enhances yield.
REFERENCES:
patent: 6815248 (2004-11-01), Leuschner et al.
patent: 2002/0160541 (2002-10-01), Durcan et al.
patent: 2003/0199104 (2003-10-01), Leuschner et al.
patent: 2005/0051820 (2005-03-01), Stojakovic et al.
Dang Phuc T.
Fliesler & Meyer LLP
Tegal Corporation
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