System and method for plasma etching

Details System and method for plasma etching System and method for plasma etching

1996-07-01

1998-04-14

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

438728, 216 70, H01L 2100

Patent

active

057387524

ABSTRACT:
A plasma etching system capable of preventing ion incident image and satisfying a high anisotropy and a high etching rate and a method using the same. A stage contains a high permeability material layer and it has a potential directly dropped to ground level, and magnetic lines of a magnetic field diffused from a plasma generation source are rendered incident on the stage in the direction substantially perpendicular thereto. This allows negative ions as well as positive ions in plasma to be incident on a substrate to be etched in the direction perpendicular thereto along the magnetic lines. As a result, since acceleration of ions by a sheath is not used it is possible to effectively prevent damage of the substrate.

REFERENCES:
patent: 5061838 (1991-10-01), Lane et al.
patent: 5290993 (1994-03-01), Kaji et al.
patent: 5587205 (1996-12-01), Saito et al.

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