Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1999-07-08
2000-06-20
Beck, Shrive
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118723E, 118723DC, H05H 100, C23C 1600
Patent
active
06077388&
ABSTRACT:
A system and method for performing plasma etch on a spherical shaped device is disclosed. The system includes a processing tube for providing a reactive chamber for the spherical shaped substrate and a plasma jet is located adjacent to the processing tube. The plasma jet includes a pair of electrodes, such as a central cathode and a surrounding anode, for producing a plasma flame directed towards the reactive chamber. The central cathode may, for example, be powered by a radio frequency power source. As a result, the reactive chamber supports non-contact etching of the spherical shaped substrate by the plasma flame.
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patent: 5955776 (1999-09-01), Ishikawa
Application No. 09/033,180, filed on Mar. 2, 1998, entitled: Inductively Coupled Plasma Powder Vaporization for Fabricating Integrated Circuits, by Ivan Murzin and Ram Ramamurthi, copy of first page of specification, abstract and figure No. one (Attorney Docket No. 22397.61).
Application No. 09/032,965, filed on Mar. 2, 1998, entitled: Plasma Immersion Ion Processor for Fabricating Semiconductor Integrated Circuits, by Ivan Murzin and Yanwei Zhang, copy of first page of specification, abstract and figure No. one (Attorney Docket No. 22397.62).
Application No. 09/069,645, filed on Apr. 29, 1998, entitled: Plasma-Assisted Metallic Film Deposition, by Changfeng Xia, copy of first page of specification, abstract and figure No. one (Attorney Docket No. 22397.68).
Heberlein, J.; Ffender E., Materials Science Forum, vol. 140-142, pp. 477-496, 1993.
Ball Semiconductor Inc.
Beck Shrive
Hassanzadeh P.
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