System and method for performing SIMOX implants using an ion...

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

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Details

C204S192110, C204S192120, C204S192340, C250S489000, C250S492300, C250S492210

Reexamination Certificate

active

07421973

ABSTRACT:
An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.

REFERENCES:
patent: 3908183 (1975-09-01), Ennis, Jr.
patent: 3961103 (1976-06-01), Aisenberg
patent: 4676194 (1987-06-01), Satou et al.
patent: 4698236 (1987-10-01), Kellogg et al.
patent: 4963735 (1990-10-01), Okamoto et al.
patent: 4987346 (1991-01-01), Katzschner et al.
patent: 5036252 (1991-07-01), Lob
patent: 5053627 (1991-10-01), Ruffell et al.
patent: 5218210 (1993-06-01), McIntyre, Jr. et al.
patent: 5563418 (1996-10-01), Leung
patent: 5846883 (1998-12-01), Moslehi
patent: 6197166 (2001-03-01), Moslehi
patent: 6248642 (2001-06-01), Dolan et al.
patent: 6305316 (2001-10-01), DiVergilio et al.
patent: 6488807 (2002-12-01), Toshima et al.
patent: 6504159 (2003-01-01), Keller
patent: 6511577 (2003-01-01), Johnson
patent: 6552295 (2003-04-01), Markunas et al.
patent: 6572732 (2003-06-01), Collins
patent: 6576909 (2003-06-01), Donaldson et al.
patent: 6623596 (2003-09-01), Collins et al.
patent: 6716727 (2004-04-01), Walther
patent: 6768120 (2004-07-01), Leung et al.
patent: 6841789 (2005-01-01), Koh et al.
patent: 6888146 (2005-05-01), Leung et al.
patent: 6936144 (2005-08-01), Weiler et al.
patent: 7064049 (2006-06-01), Ito et al.
patent: 2001/0047760 (2001-12-01), Moslehi
patent: 2002/0022344 (2002-02-01), Kang et al.
patent: 2002/0098713 (2002-07-01), Henley et al.
patent: 2003/0197129 (2003-10-01), Murrell et al.
patent: 2005/0016462 (2005-01-01), Yamazaki
patent: 2 308 745 (1997-07-01), None
patent: WO 01/63981 (2001-08-01), None
“The ULE2 Ion Source Capabilities Important to SOI Technology”, Michael A. Graf, Wade Krull and Victor Beneveniste, Eaton Corporation, Beverly, MA 01915, No date available, 4 pgs.

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