Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-06-03
1995-07-18
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250251, H01J 37317
Patent
active
054344239
ABSTRACT:
An improved ion implantation system and method for placing dopant upon and within a semiconductor surface. The ion implantation system is capable of higher beam current by reducing dopant concentration across selected surface areas. Offsetting electrons are also diffused to maintain a lower net ion level at the selected areas. Amount of beam current can be increased according to user requirements to enhance throughput of the implantation process. Diffusion of ions and electrons is achieved by reconfiguring or redesigning an acceleration tube placed subsequent to the ion source. The acceleration tube comprises a plurality of electrodes spaced adjacent each other and extending as a pair of rows. Each row extends from a location proximal to the ion source to a location distal to the ion source. Sourcing a power supply upon a more distally located electrode allows the ions and/or electrons to diffuse outward from their acceleration path at a larger spot size upon the semiconductor surface.
REFERENCES:
patent: 3908183 (1975-09-01), Ennis
patent: 4383180 (1983-05-01), Turner
patent: 4578589 (1986-03-01), Aitken
patent: 4595837 (1986-06-01), Wu et al.
patent: 4825087 (1989-04-01), Renau et al.
patent: 4870284 (1989-09-01), Hashimoto et al.
patent: 5091655 (1992-02-01), Dykstra et al.
patent: 5134301 (1992-07-01), Kamata
patent: 5136171 (1992-08-01), Leung et al.
patent: 5343047 (1994-08-01), Ono et al.
Advanced Micro Devices , Inc.
Anderson Bruce C.
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