Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-07-11
1998-09-29
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250251, H01J 2702
Patent
active
058148191
ABSTRACT:
An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.
REFERENCES:
patent: 5164599 (1992-11-01), Benveniste
patent: 5492862 (1996-02-01), Misumi
patent: 5531420 (1996-07-01), Benveniste
patent: 5576538 (1996-11-01), Sakai et al.
patent: 5670785 (1997-09-01), Kitamura
Benveniste Victor
Chen Jiong
Sinclair Frank
Eaton Corporation
Kastelic John A.
Nguyen Kiet T.
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