Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-10-03
2006-10-03
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257SE51040, C977S938000, C977S949000, C977S742000
Reexamination Certificate
active
07115916
ABSTRACT:
A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode, a source coupled to a first end of the channel injecting electrons into the channel, and a drain coupled to a second end of the channel injecting holes into the channel.
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patent: 2002/0064894 (2002-05-01), Lee
Gudiksen, Mark S., et al.,Growth of nanowire superlattice structures for nanoscale photonics and electronics,Nature, vol. 415, Feb. 7, 2002, pp. 617-620.
Zhou, Chongwu et al.,Modulated chemical doping of individual carbon nanotubes,Science, vol. 290, Nov. 24, 2000, pp. 1552-1555.
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Avouris Phaedon
Cohen Guy Moshe
Martel Richard
Misewich James A.
Tsang James Chen-Hsiang
F. Chau & Associates LLC
International Business Machines - Corporation
Landau Matthew C.
Parker Kenneth
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