System and method for mixing a gas into a solvent used in semico

Details System and method for mixing a gas into a solvent used in semico System and method for mixing a gas into a solvent used in semico

1998-05-04

2000-01-25

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

156345, 216 83, H01L 2100

Patent

active

060178272

ABSTRACT:
The present invention generally provides a physical system and method for mixing a gas in a solvent to produce a solution used in the processing of a semiconductor work object. To dissolve a desired gas into a desired solvent, the solvent and gas are introduced into a pressurizable mixing module. The mixing module is selectably in communication with a process vessel. A pressure control mechanism, such as a valve, is located downstream of the mixing module to regulate the pressure and flow of solution or fluid in and leaving the mixing module to the process vessel. Preferably, the pressure control mechanism is located downstream and in communication with the process vessel. By adjusting the level of restriction of the pressure control mechanism the pressure of the gas in the mixing vessel above the solvent may be positively or negatively affected to vary the concentration of gas in solution based on Henry's Law. The system and method of this invention can be used to produce solutions of water and ozone having over 5 ppm ozone. It can also be used to produce water-ozone solutions having at least 16 ppm ozone at mixing temperatures over 15.degree. C.

REFERENCES:
patent: 5431861 (1995-07-01), Nagahiro et al.
patent: 5464480 (1995-11-01), Matthews
James A. Plambeck, Introductory University Chemistry I, Solutions and Solubility, Henry's Law and the Solubility of Gases, Print-out of internet search conducted Aug. 13, 1997, URL: http://www.chem.ualberta.ca/courses/plambeck/p101/p01182.htm, 2 pages, Copyright 1995 (purported).

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