System and method for measuring time dependent dielectric...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

11269989

ABSTRACT:
An integrated circuit, in accordance with one embodiment of the present invention, includes a first device under test (DUT) module coupled to a first ring oscillator module and a second DUT module coupled to a second ring oscillator module. A dielectric layer of the first DUT is stressed during a first mode, thereby causing time dependent dielectric breakdown in the first dielectric layer. A dielectric layer of the second DUT is maintained as a reference. The operating frequency of the first ring oscillator module, during a second mode, is a function of a gate leakage current of the stressed dielectric layer. The operating frequency of the second ring oscillator module, during the second mode, is a function of a gate leakage current the reference dielectric layer. The integrated circuit may also include a comparator module for generating an output signal as a function of a difference between the operating frequency of the first and second ring oscillator modules.

REFERENCES:
patent: 6455901 (2002-09-01), Kameyama et al.
patent: 6476632 (2002-11-01), La Rosa et al.
patent: 6882172 (2005-04-01), Suzuki et al.
patent: 6885210 (2005-04-01), Suzuki
patent: 6903564 (2005-06-01), Suzuki
patent: 2001/0052623 (2001-12-01), Kameyama et al.
patent: 2004/0104731 (2004-06-01), Vollersten et al.
patent: 2005/0212547 (2005-09-01), Suzuki
patent: 1398639 (2004-03-01), None
Oner et al. “A compact monitoring circuit for real-time on-chip diagnosis of hot-carrier induced degradation” Microelectronic test structures, 1997.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

System and method for measuring time dependent dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method for measuring time dependent dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for measuring time dependent dielectric... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3885978

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.