System and method for measuring time dependent dielectric...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S1540PB

Reexamination Certificate

active

10870751

ABSTRACT:
An integrated circuit, in accordance with one embodiment of the present invention, includes a first device under test (DUT) module coupled to a first ring oscillator module and a second DUT module coupled to a second ring oscillator module. A dielectric layer of the first DUT is stressed during a first mode, thereby causing time dependent dielectric breakdown in the first dielectric layer. A dielectric layer of the second DUT is maintained as a reference. The operating frequency of the first ring oscillator module, during a second mode, is a function of a gate leakage current of the stressed dielectric layer. The operating frequency of the second ring oscillator module, during the second mode, is a function of a gate leakage current the reference dielectric layer. The integrated circuit may also include a comparator module for generating an output signal as a function of a difference between the operating frequency of the first and second ring oscillator modules.

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Oner H. et al. “A Compact Monitoring Circuit For Real-Time On -Chip Diagnosis Of Hot-Carrier Introduced Degradation” Microelectronic Test Structures, 1997.

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