System and method for measuring properties of a...

Details System and method for measuring properties of a... System and method for measuring properties of a...

2006-11-07

2006-11-07

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C356S432000, C324S754120

Reexamination Certificate

active

07133128

ABSTRACT:
One aspect of the invention discloses a method of determining the dopant profile of doped regions in a semiconductor substrate. A pump laser is used to create excess carriers in this semiconductor substrate. The excess carrier concentration will influence the reflection of a probe laser. From the reflected probe laser not only the bulk components but also the near-surface components are eliminated to only yield the bulk components.

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Borden, et al., “Carrier Illumination characterization of ultra-shallow implants”,Handbook of Silicon Semiconductor Metrology, A.C. Diebold, Ed., Decker Inc., New York, pp. 97-116. (2001).
Clarysse, et al., “Carrier illumination for characterization of ultra-shallow doping profiles”, as recorded in the proceeding of the Ultra-Shallow Junctions 2003 Workshop, (2003).

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