Optics: measuring and testing – Dimension – Thickness
Reexamination Certificate
2008-01-15
2008-01-15
Nguyen, Sang H. (Department: 2886)
Optics: measuring and testing
Dimension
Thickness
C438S008000, C438S014000
Reexamination Certificate
active
07319530
ABSTRACT:
A system and method is disclosed for measuring a germanium concentration in a semiconductor wafer for manufacturing control of BiCMOS films. Germanium is deposited over a silicon substrate layer to form a silicon germanium film. Then a rapid thermal oxidation (RTO) procedure is performed to create a layer of thermal oxide over the silicon germanium film. The thickness of the layer of thermal oxide is measured in real time using an interferometer, an ellipsometer, or a spectroscopic ellipsometer. The measured thickness of the layer of thermal oxide is correlated to a germanium concentration of the silicon germanium film using an approximately linear correlation. The correlation enables a value of the germanium concentration in the silicon germanium film to be provided in real time.
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Budri Thanas
Printy Craig
National Semiconductor Corporation
Nguyen Sang H.
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