System and method for matching silicon oxide thickness...

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

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C700S121000

Reexamination Certificate

active

07983776

ABSTRACT:
The present invention is one or more implementations is a method of fabricating a semiconductor for improved oxide thickness control, defining a process tool, determining and evaluating performance variables, determining a performance impact factor and thereafter modifying control of the process tool in the fabrication process to operate in direct relation to the determined results of the present invention. The present invention sets forth definitive advantages in reducing engineering time, improving process controls and improving cycle-times.

REFERENCES:
patent: 2004/0148049 (2004-07-01), Schwarm
patent: 2009/0005894 (2009-01-01), Bomholt et al.
Boning, D.S., Mozumder, P.K. “DOE/Opt: A System for Design of Experiments, Response Surface Modeling, and Optimization Using Process and Device Simulation”. IEEE Transactions on Semiconductor Manufacturing vol. 7, No. 2 (1994): 233-244.

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