Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-06-07
2005-06-07
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S338000, C257S369000
Reexamination Certificate
active
06903384
ABSTRACT:
A dual gate strained-Si MOSFET with thin SiGe dislocation regions and a method for fabricating the same are provided. The method comprises: forming a first layer of relaxed SiGe overlying a substrate, having a thickness of less than 5000 Å; forming a second layer of relaxed SiGe overlying the substrate and adjacent to the first layer of SiGe, having a thickness of less than 5000 Å; forming a layer of strained-Si overlying the first and second SiGe layers; forming a shallow trench isolation region interposed between the first SiGe layer and the second SiGe layer; forming an n-well in the substrate and the overlying first layer of SiGe; forming a p-well in the substrate and the overlying second layer of SiGe; forming channel regions, in the strained-Si, and forming PMOS and NMOS transistor source and drain regions.
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Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-shen
Tweet Douglas J.
Curtin Joseph P.
Jackson Jerome
Ripma David C.
Sharp Laboratories of America Inc.
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