Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-29
2005-03-29
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S764000, C257S748000, C257S736000, C257S763000, C257S741000
Reexamination Certificate
active
06873048
ABSTRACT:
A dual-gate MOSFET with metal gates and a method for setting threshold voltage in such a MOSFET is provided. The method comprises: forming a gate oxide layer overlying first and second channel regions; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer first thickness; selectively removing the second metal layer overlying the first channel region; forming a third metal layer; establishing a first MOSFET with a gate work function responsive to the thicknesses of the first and third metal layer overlying the first channel region; and, establishing a second MOSFET, complementary to the first MOSFET, with a gate work function responsive to the combination of the thicknesses of the first, second, and third metal layers overlying the second channel region.
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S.M. Sze, “Physics of Semiconductor Devices,” John Wiley & Sons, New York (1981) p. 251.*
B.R. Rogers, “Underlayer Work Function Effect on Nucleation and Film Morphology of Chemical Vapor Deposdited Aluminium,” Thin Solid Films, V. 408 (2002), pp. 87-96.
Conley, Jr. John F.
Gao Wei
Ono Yoshi
Curtin Joseph P.
Lee Eddie
Magee Thomas
Rabdau Matthew D.
Ripma David C.
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