System and method for integrated oxide removal and...

Details System and method for integrated oxide removal and... System and method for integrated oxide removal and...

2005-08-23

2005-08-23

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

C216S073000, C134S001300, C134S003000, C427S309000

Reexamination Certificate

active

06932915

ABSTRACT:
An integrated oxide removal and processing system (10) includes a process module (30) that may intentionally add at least one film layer to a single semiconductor wafer (32). The integrated oxide removal and processing system (10) also includes a transfer chamber module (20) used to align the semiconductor wafer (32) for the process module (30). The transfer chamber module (20) may expose the semiconductor wafer (32) to a vaporous solution that is inert with respect to the semiconductor wafer (32) and operable to remove an oxide layer (110) therefrom. More specifically, the semiconductor wafer (32) includes silicon. In a further embodiment, the vaporous solution includes HF. In yet a further embodiment, the vaporous solution includes 0.049% to 49% HF.

REFERENCES:
patent: 5620559 (1997-04-01), Kikuchi
patent: 5670431 (1997-09-01), Huanga et al.
patent: 5679171 (1997-10-01), Saga et al.
patent: 5770263 (1998-06-01), Hawthorne et al.

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