System and method for increasing nitrogen incorporation into...

Details System and method for increasing nitrogen incorporation into... System and method for increasing nitrogen incorporation into...

2005-05-03

2005-05-03

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S483000

Reexamination Certificate

active

06887727

ABSTRACT:
A method and system for growing a layer of semiconductor material is disclosed. The method can be used to grow a layer of a semiconducting material comprising at least one Group III element, nitrogen and at least one other Group V element as constituent elements thereof, the method comprising providing a reactor and supplying precursors to the reactor. The precursors include a precursor for each of the at least one Group III element, a precursor for the nitrogen, a precursor for each of the at least one Group V element other than nitrogen, and a precursor for an element having a stronger bond strength with nitrogen than each of the at least one Group III element has with nitrogen. The method can be implemented in, for example, a metal organic chemical vapor deposition (MOCVD) reactor.

REFERENCES:
patent: 5689123 (1997-11-01), Major et al.
patent: 5945689 (1999-08-01), Koike et al.
patent: 6207973 (2001-03-01), Sato et al.

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