Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2011-07-26
2011-07-26
Olsen, Allan (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S697000, C438S778000
Reexamination Certificate
active
07985687
ABSTRACT:
A method for forming a memory device includes forming a hard mask over a substrate, where the hard mask includes a first mask layer and a second mask layer formed over the first mask layer. The substrate is etched to form a trench. The trench is filled with a field oxide material. The second mask layer is stripped from the memory device using a first etching technique and the first mask layer is stripped from the memory device using a second etching technique, where the second etching technique is different than the first etching technique.
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Hui Angela T.
Kim Unsoon
Kinoshita Hiroyuki
Sachar Harpreet K.
Advanced Micro Devices , Inc.
Harrity & Harrity LLP
Olsen Allan
Spansion LLC
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