System and method for hydrogen exfoliation

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21567

Reexamination Certificate

active

10953938

ABSTRACT:
A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

REFERENCES:
patent: 6159323 (2000-12-01), Joly et al.
patent: 6187110 (2001-02-01), Henley et al.
patent: 6316333 (2001-11-01), Bruel et al.
patent: 6350703 (2002-02-01), Sakaguchi et al.
patent: 6544862 (2003-04-01), Bryan
Q.-Y. Tong and U. Gosele, “Semiconductor wafer bonding”, John Wiley & Sons, New York. 1999.
M. Cai, D. Qiao, L.S. Yu and S.S. Lau, Single crystal Si layers on glass formed by ion cutting,Journal of Applied Physics, vol. 92, No. 6, Sep. 15, 2002, p. 3388-3392.
C.H. Yun, A.B. Wengrow and N.W. Cheung, “Transfer of patterned ion-cut silicon layers”,Applied Physics Letters, vol. 73, No. 19, Nov. 9, 1998, pp. 2772-2774.
M.K. Weldon et al, “On the mechanism of the hydrogen-induced exfoliation of silicon”,Journal of Vacuum science and Technology B. vol. 15, No. 4 Jul./Aug. 1997 pp. 1065-1073.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

System and method for hydrogen exfoliation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method for hydrogen exfoliation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for hydrogen exfoliation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3824509

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.