Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2005-03-15
2009-06-09
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S384000, C438S238000, C257SE21004
Reexamination Certificate
active
07544579
ABSTRACT:
A system and method is disclosed for providing a resistor protect layer to protect a thin film resistor in a semiconductor device. A thin film resistor is formed on a dielectric layer and a resistor protect layer is placed over the thin film resistor. An etch procedure is employed to facet the corners of the resistor protect layer. The faceted corners of the resistor protect layer reduce the step height of the resistor protect layer. Then a conductor is deposited over the resistor protect layer and the dielectric layer. When portions of the conductor are subsequently etched away, the resistor protect layer protects the underlying thin film resistor from being exposed to the etch process.
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U.S. Appl. No. 11/285,702, filed Nov. 21, 2005, “System and Method for Faceting a Masking Layer in a Plasma Etch to Slope a Feature Edge”.
National Semiconductor Corporation
Trinh Michael
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