Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-08-23
2005-08-23
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S046012, C438S507000
Reexamination Certificate
active
06934312
ABSTRACT:
A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.
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Chang Ying-Ian
Takeuchi Tetsuya
Tan Michael
Agilent Technologie,s Inc.
Harvey Minsun Oh
Nguyen Dung (Michael) T
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