System and method for fabricating diodes

Details System and method for fabricating diodes System and method for fabricating diodes

2006-06-13

2006-06-13

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C438S931000

Reexamination Certificate

active

07061021

ABSTRACT:
This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.

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patent: 6670688 (2003-12-01), Satoh et al.
patent: 2002/0019117 (2002-02-01), Nagasawa
patent: 9800960 (1998-03-01), None

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