Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2011-04-12
2011-04-12
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S068000, C117S070000, C117S929000
Reexamination Certificate
active
07922815
ABSTRACT:
A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g., valves, heaters, coolers, pumps).
REFERENCES:
patent: 2996763 (1961-08-01), Wentorf, Jr.
patent: 3030188 (1962-04-01), Eversole
patent: 3038409 (1962-06-01), Edgerly et al.
patent: 3142539 (1964-07-01), Brinkman et al.
patent: 3175885 (1965-03-01), Brinkman et al.
patent: 3371996 (1968-03-01), Hibshman
patent: 3630677 (1971-12-01), Angus
patent: 3705937 (1972-12-01), Dzevitsky
patent: 3853700 (1974-12-01), Armijo
patent: 3892539 (1975-07-01), Midler, Jr.
patent: 3906082 (1975-09-01), Shulzhenko et al.
patent: 4049788 (1977-09-01), Bierbach et al.
patent: 4105493 (1978-08-01), Chauvy
patent: 4849199 (1989-07-01), Pinneo
patent: 4939763 (1990-07-01), Pinneo et al.
patent: 4960562 (1990-10-01), Okuda et al.
patent: 4963200 (1990-10-01), Okuda et al.
patent: 4984534 (1991-01-01), Ito et al.
patent: 5015528 (1991-05-01), Pinneo
patent: 5209812 (1993-05-01), Wu et al.
patent: 5391846 (1995-02-01), Taylor et al.
patent: 5441013 (1995-08-01), Jeng et al.
patent: 5516884 (1996-05-01), Bianconi
patent: 5609926 (1997-03-01), Prins
patent: 6019509 (2000-02-01), Speckbrock et al.
patent: 6919061 (2005-07-01), Sherman et al.
patent: 7235130 (2007-06-01), Hemley et al.
patent: 7258741 (2007-08-01), Linares et al.
patent: 2005/0020853 (2005-01-01), Kuroda et al.
patent: 2006/0288927 (2006-12-01), Chodelka et al.
patent: 2007/0014965 (2007-01-01), Chodelka et al.
patent: 2007/0017437 (2007-01-01), Genis et al.
patent: 2007/0164427 (2007-07-01), Sauciuc et al.
patent: 2007/0180951 (2007-08-01), Armstrong et al.
patent: 2007/0193864 (2007-08-01), Beerling
patent: 761 531 (1956-11-01), None
patent: WO 2007002402 (2004-01-01), None
patent: WO 2007002399 (2007-01-01), None
Ainsley et al., “The Solubility of Carbon in Sodium”, “Journal of Nuclear Materials”, Mar. 6, 1974, pp. 255-276, vol. 52, Publisher: North-Holland Publishing Company.
Davis, “The New Diamond Age”, “Wired”, Sep. 2003, vol. 11.09.
Pam Frost Gorder, “Bucky Diamonds In The Rough”, “Physical Review-Focus”, Jan. 30, 2003, p. 037401, vol. 11, No. 90.
Kesser, “Sodium Technology Quarterly Report”, “Reactor Technology”, Mar. 1971, vol. ANL/ST-8, Publisher: Argonne National Laboratory.
Paul W. May, “The New Diamond Age?”, “Science”, Mar. 14, 2008, pp. 1490-1491, vol. 319, Publisher: AAAS.
Sangster, “C-Na (Carbon-Sodium) System”, “Journal of Phase Equilibria and Diffusion”, Sep. 27, 2007, pp. 571-579, vol. 28, No. 6.
Spear et al., “High temperature chemistry of CVD (chemical vapor deposition) diamond growth”, “Pure and Applied Chemistry”, 1994, pp. 1773-1782, vol. 66, No. 9, Published in: Great Britain.
Evgeny Y. Tsymbal, “Section 1-Crystal Structure (lecture notes)”, “Solid-State Physics 927”, Sep. 7, 2003, pp. 1-9, Publisher: University of Nebraska-Lincoln (Department of Physics and Astronomy).
Wang et al., “Calculated phase diagrams for activated low pressure diamond growth from C-H, C-O, and C-H-O systems”, “Journal of Materials Research”, Dec. 1997, pp. 3250-3253, vol. 12, No. 12.
Wang et al., “Modern Thermodynamics for CVD Diamond”, Mar. 23, 2006, Publisher: Dept. of Microelectronics, Fudan University, Shanghai, China, Published in: China.
Weaver et al., “Thermodynamic Computation of Phase Equilibria in the Sodium-Carbon-Oxygen System”, “Metallurgical Transactions”, Apr. 1977, pp. 603-607, vol. 8A.
PCTUS0935783 IPRP, Mar. 11, 2010, EPO Patent Examiner.
Kunemund Robert M
Lemaire Charles A.
Lemaire Patent Law Firm, P.L.L.C.
Rixen Jonathan M.
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