Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2007-11-29
2010-12-14
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S015000
Reexamination Certificate
active
07851234
ABSTRACT:
A method is disclosed for controlling the sheet resistance of copper trenches formed on semiconductor wafers. The method includes forming a plurality of copper-filled trenches on a wafer, measuring the sheet resistance of each of the plurality of copper-filled trenches, and comparing the measured sheet resistance values to a predetermined sheet resistance value. Photolithography steps performed on subsequent wafers are adjusted according to a difference between the measured sheet resistance values and the predetermined value. In one embodiment, this adjustment takes the form of adjusting a photolithographic extension exposure energy to thereby adjust the cross-section of the resulting trenches.
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Hsieh Chi-Chun
Ko Francis
Lo Henry
Wang Amy
Wang Jean
Choudhry Mohammad
Duane Morris LLP
Pham Thanh V
Taiwan Semiconductor Manufacturing Co. Ltd.
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