System and method for determining the logic state of a...

Details System and method for determining the logic state of a... System and method for determining the logic state of a...

2006-02-14

2006-02-14

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Read only systems

Magnetic

C365S210130, C365S209000, C365S207000

Reexamination Certificate

active

06999334

ABSTRACT:
A system and method for determining the logic state of a memory cell in a magnetic tunnel junction (MTJ) memory device based on the ratio of the current through the cell at different bias points are disclosed. A memory cell in an MJT memory device is sequentially subjected to at least two different bias voltages. The current through the cell at each of the bias voltages is measured, and a ratio of the different currents is determined. The ratio is then compared with a predetermined value to determine the logic state of the cell. The predetermined value can be a known value. Alternatively, the predetermined value can be determined by application of the system and method to a reference cell having a known logic state.

REFERENCES:
patent: 6590804 (2003-07-01), Perner
patent: 6639839 (2003-10-01), Chou et al.
patent: 6650562 (2003-11-01), Holden et al.
patent: 6674679 (2004-01-01), Perner et al.
U.S. Appl. No. 10/609,278, filed Jun. 2003, Perner.

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