System and method for de-embedding a device under test...

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Distributive type parameters

Reexamination Certificate

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C324S601000, C702S085000

Reexamination Certificate

active

07741857

ABSTRACT:
S-parameter data is measured on an embedded device test structure, an open dummy, and a short dummy. A 4-port network of the pad set parasitics of the embedded device test structure is modeled by a parameterized netlist containing a lumped element network having at least one parameterized lumped element. The S-parameter data across a range of measurement frequencies is fitted with the parameterized netlist employing the at least one parameterized lumped element as at least one fitting parameter for the S-parameter data. Thus, the fitting method is a multi-frequency fitting for the at least one parameterized lumped element. A 4-port Y-parameter (admittance parameter) is obtained from the fitted parameterized netlist. The Y-parameter of the device under test is obtained from the measured admittance of the embedded device test structure and the calculated 4-port Y parameter.

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Q. Liang, et al., “A Simple Four-Port Parasitic Deembedding Methodology for High-Frequency Scattering Parameter and Noise Characterization of SiGe HBTS,” IEEE Transactions on Microwave Theory and Techniques, vol. 51, No. 11, pp. 2165-2174.

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