Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2008-03-18
2008-03-18
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S201000, C117S202000, C117S204000, C117S207000, C117S223000, C117S900000, C117S932000, C117S936000
Reexamination Certificate
active
11212027
ABSTRACT:
To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
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Joyce David B.
Khattak Chandra P.
Schmid Frederick
Crystal Systems Inc.
Gupta Yogendra N.
Malekzadeh Seyed Masoud
Wilmer Cutler Pickering Hale and Dorr LLP
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