Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2008-03-18
2008-03-18
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S201000, C117S202000, C117S204000, C117S207000, C117S223000, C117S900000, C117S932000, C117S936000
Reexamination Certificate
active
07344596
ABSTRACT:
To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
REFERENCES:
patent: 3653432 (1972-04-01), Schmid et al.
patent: 3898051 (1975-08-01), Schmid
patent: 4108236 (1978-08-01), Salkeld
patent: 4178986 (1979-12-01), Smashey
patent: 4190094 (1980-02-01), Giamei
patent: 4202400 (1980-05-01), Gigliotti, Jr. et al.
patent: 4256530 (1981-03-01), Schmid
patent: 4409451 (1983-10-01), Taylor
patent: 4461671 (1984-07-01), Seifert
patent: 4770704 (1988-09-01), Gibson
patent: 4840699 (1989-06-01), Khattak et al.
patent: 5116456 (1992-05-01), Nestor
patent: 5134261 (1992-07-01), Larkin
patent: 5772761 (1998-06-01), Petroz
patent: 5988257 (1999-11-01), Hugo
patent: 6146456 (2000-11-01), Mizugaki
patent: 6309461 (2001-10-01), Gianoulakis
patent: 6624390 (2003-09-01), Motakef
patent: 2001/0018960 (2001-09-01), Thompson
patent: 2002/0166503 (2002-11-01), Magras et al.
patent: 2003/0234092 (2003-12-01), Brinegar
patent: 2004/0016743 (2004-01-01), Motakef
patent: 2004/0192015 (2004-09-01), Ammon et al.
patent: 2004/0194692 (2004-10-01), Nishikawa et al.
patent: 200172492 (2001-03-01), None
patent: 2004262723 (2004-09-01), None
Joyce David B.
Khattak Chandra P.
Schmid Frederick
Crystal Systems Inc.
Gupta Yogendra N.
Malekzadeh Seyed Masoud
Wilmer Cutler Pickering Hale and Dorr LLP
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