Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2011-04-05
2011-04-05
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S082000, C117S083000, C117S021000, C117S025000
Reexamination Certificate
active
07918936
ABSTRACT:
To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
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Extended/Supplementary European Search Report for European Patent Application No. 06802314.2 mailed Jun. 8, 2010. 5 pages.
Joyce David B.
Khattak Chandra P.
Schmid Frederick
GT Crystal Systems, LLC
Kunemund Robert M
Wilmer Cutler Pickering Hale and Dorr LLP
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