Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2005-12-14
2008-12-30
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S663000, C438S202000, C438S513000, C438S905000, C257SE21227, C257SE21284, C257SE21412, C257SE21497
Reexamination Certificate
active
07470594
ABSTRACT:
A method is disclosed for controlling the formation of an interfacial oxide layer in a polysilicon emitter transistor device. The interfacial oxide layer is formed between an underlying substrate of single crystal silicon and an upper layer of polysilicon. The current gain and the emitter resistance of the transistor device are related to the thickness of the interfacial oxide layer. The oxide of the interfacial oxide layer is grown in a low pressure, low temperature pure oxygen (O2) environment that greatly reduces the oxidation rate. The low oxidation rate allows the thickness of the interfacial oxide layer to be precisely controlled and sources of variation to be minimized in the manufacturing process.
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Coppock William Max
Dark Charles A.
Foote, Jr. Richard W.
Rust Darren Lee
National Semiconductor Corporation
Nhu David
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