Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-10-09
2007-10-09
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S019000, C257S085000, C257S094000, C438S046000, C438S047000, C438S077000, C438S094000
Reexamination Certificate
active
10750522
ABSTRACT:
The optical modulator may include a strained layer of SiGe to confine carriers in a quantum well. The strained layer of SiGe may be doped with arsenic to provide electrons. The optical modulator may receive an optical signal and modulate the received signal by altering the absorption coefficient of the strained layer of SiGe responsive to an electrical signal. The optical modulator device device may be suitable for use in chip-to-chip and on-chip interconnections.
REFERENCES:
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6424450 (2002-07-01), Goossen
patent: 6949761 (2005-09-01), Chu et al.
patent: 6954473 (2005-10-01), Dehmubed et al.
Intel Corporation
Lee Hsien-Ming
Pedigo Philip A.
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