Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2007-08-14
2007-08-14
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C257SE21525
Reexamination Certificate
active
10927258
ABSTRACT:
The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.
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Aghababazadeh Majid
Estabil Jose J.
Pakdaman Nader
Steinbrueck Gary L.
Vickers James S.
Chaudhari Chandra
Shemwell Mahamedi LLP
tau-Metrix, Inc.
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